Silicon Carbide Substrate As the 3rd generation semiconductor,Silicon carbide possesses wide band-gap,excellent thermal conductivity, high breakdown field strength,saturated electron drift velocity,mechanical hardness and anti-radiation,which are superior to that of conventional semiconductor materials including silicon (Si) and gallium arsenide (GaAs) greatly.Unique properties have hastened SiC to find applications in fabricating high temperature,high frequency, high power and high radiation,and optoelectronic devices during recent years.Besides,small lattice and thermal expansion mismatches with III-group nitride make SiC an outstanding substrate material for the epitaxial growth of nitride films.
